Such applications also imply design and performance limitations requiring high saturation current as well as large transconductance, which may be achieved by heavy doping. Working toward the need of high frequency, low noise, and high power density applications, traditional MOSFETs and MESFETs require to be built with very short channel lengths so that majority of the carriers face minimum impurity scattering and performance degradation is reduced. Following that, HEMT was first commercially used as a cryogenic low‐noise amplifier at Nobeyama Radio Observatory (NRO), Nagano, Japan in 1985. Mimura who was involved in research of high‐frequency, high‐speed III–V compound semiconductor devices at Fujitsu Laboratories Ltd, Kobe, Japan.

The invention of HEMT devices is accredited to T.

The requirement of high switching speed such as needed in the field of microwave communications and RF technology urged transistors to evolve with high electron mobility and superior transport characteristics.

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